Hot-carrier reliability of MOSFETs at room and cryogenic temperature

Comparison of Tribological Behavior of Deep Cryogenic Treated Hot Work Tool Steel at Room and High Temperature

The deep cryogenic treatment is a complementary operation that is done on a variety of tool steels aimed at improving their abrasion resistance and hardness. In the case of the H13 hot-work steel, which is widely used at high temperatures as a hot-deformation tool, we need to determine the efficiency of subzero treatment on it at the working temperature. In this regard, this paper is focu...

MOSFET DEGRADATION DUE TO NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI) AND HOT CARRIER INJECTION (HCI) AND ITS IMPLICATIONS FOR RELIABILITY-AWARE VLSI DESIGN A Dissertation

Kufluoglu, Haldun Ph.D., Purdue University, December, 2007. MOSFET Degradation due to Negative Bias Temperature Instability (NBTI) and Hot Carrier Injection (HCI) and Its Implications for Reliability-aware VLSI Design . Major Professor: Muhammad A. Alam. The scaling trends in CMOS technology and operating conditions give rise to serious degradation mechanisms such as Negative Bias Temperature I...

CMOS reliability issues for emerging cryogenic Lunar electronics applications

We investigate the reliability issues associated with the application of CMOS devices contained within an advanced SiGe HBT BiCMOS technology to emerging cryogenic space electronics (e.g., down to 43 K, for Lunar missions). Reduced temperature operation improves CMOS device performance (e.g., transconductance, carrier mobility, subthreshold swing, and output current drive), as expected. However...

Reduced temperature dependence of hot carrier degradation in deuterated nMOSFETs

Deuterated oxides exhibit prolonged hot carrier lifetimes at room temperature. We report evidence that this improved hot carrier hardness exists over the temperature range between -25 °C and 200 °C. However, the benefit of deuterium incorporation deceases with increasing stress temperature. Furthermore the VT -shift shows a remarkable absence of temperature dependence for the deuterated samples...

Wire width dependence of hot carrier degradation in silicon nanowire gate-all-around MOSFETs